Structural, chemical, and electrical properties of Y 2 O 3 thin films grown by atomic layer deposition with an (iPrCp) 2 Y(iPr-amd) precursor-Reference-Cited by-同舟云学术

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Structural, chemical, and electrical properties of Y 2 O 3 thin films grown by atomic layer deposition with an (iPrCp) 2 Y(iPr-amd) precursor

Published:2017-06 Issue: Volume:63 Page:279-284
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kang J.-H.,Jung Yong Chan,Seong Sejong,Lee Taehoon,Ahn Jinho,Noh Wontae,Park In-Sung

Funder

Basic Science Research Program

Nano·Material Technology Development Program

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Physical and Electrical Properties of Yttrium Oxide Gate Dielectrics on Si Substrate with NH[sub 3] Plasma Treatment

2. Atomic layer deposition of Y2O3onh-BN for a gate stack in graphene FETs

3. High-Performance Metal–Insulator-Metal Capacitor Using Stacked $\hbox{TiO}_{2}/\hbox{Y}_{2}\hbox{O}_{3}$ as Insulator

4. Unipolar Memristive Switching in Yttrium Oxide and RESET Current Reduction Using a Yttrium Interlayer

5. Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric

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1. Chemical characteristics via quantitative photoelectron analysis of chemical-solution-deposited yttrium oxide thin films for metal-insulator-metal capacitor applications;Thin Solid Films;2024-03

2. Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials;Transactions on Electrical and Electronic Materials;2023-12-20

3. Photoluminescence Property of Erbium-Doped Yttrium Oxide: Doping Concentration and Its Effect;Integrated Ferroelectrics;2022-10-06

4. Review—Gate Oxide Thin Films Based on Silicon Carbide;ECS Journal of Solid State Science and Technology;2022-08-01

5. HfO2:Y2O3 ultrathin nanolaminate structures grown by ALD: Bilayer thickness and annealing temperature effects on optical properties;Ceramics International;2022-06

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