Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric-Reference-Cited by-同舟云学术

Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric

Published:2014-04 Issue: Volume:297 Page:16-21
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Jae-Seung,Kim Woo-Hee,Oh Il-Kwon,Kim Min-Kyu,Lee Gyeongho,Lee Chang-Wan,Park Jusang,Lansalot-Matras Clement,Noh Wontae,Kim Hyungjun

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

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5. The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles;Fischer;Appl. Phys. Lett.,2008

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