Schottky performance variation on r -plane and c -plane of GaN micro truncated-pyramid grown by selective area MOCVD

Author:

Chen Jie,Han Xiaobiao,Huang Puman,Chen Weijie,Liang Jiezhi,Zhong Changming,Pan Zhengzhou,Wu Zhisheng,Liu Yang,Zhang Baijun

Funder

National Key Research and Development Program

Nature Science Foundation of China

International Sci. & Tech. Collaboration Program of Guangdong Province

International Sci. & Tech. Collaboration Program of Guangzhou City

National High-tech R&D Program of China

Guangdong Natural Science Foundation

Science & Technology Plan of Guangdong Province

Science & Technology Plan of Guangzhou

Science & Technology Plan of Foshan

Guangdong-Hong Kong Joint Innovation Project of Guangdong Province

Opened Fund of The State Key Laboratory on Integrated Optoelectronics

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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