The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution-Reference-Cited by-同舟云学术

The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution

Published:2021-02 Issue: Volume:480 Page:126467
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Cui Jishi^ORCID,Li Tiantian,Yang Fenghe,Cui Wenjing,Chen Hongmin

Funder

State Key Laboratory of Advanced Optical Communication Systems and Networks, China

Digital Fujian Research Institute for Industrial Energy Big Data, China

Fujian Province University Key Laboratory for the Analysis and Application of Industry Big Data, China

Fujian Key Lab of Agriculture IOT Application, China

IOT Application Engineering Research Center of Fujian Province Colleges and Universities, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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