Modeling a novel InP/InGaAs avalanche photodiode structure: Reducing the excess noise factor-Reference-Cited by-同舟云学术

Modeling a novel InP/InGaAs avalanche photodiode structure: Reducing the excess noise factor

Published:2019-03 Issue: Volume:435 Page:374-377
ISSN:0030-4018
Container-title:Optics Communications
language:en
Short-container-title:Optics Communications

Author:

Liu Guipeng,Wang Xin,Zhao Jingze,Chen Wenjie,Tian Yonghui,Yang Jianhong

Funder

National Natural Science Foundation of China

Gansu Province Natural Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Recent Advances in Avalanche Photodiodes

2. Breakdown characteristics in InP/InGaAs avalanche photodiode withp-i-nmultiplication layer structure

3. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment

4. The channeling avalanche photodiode: A novel ultra-low-noise interdigitated p-n junction detector

5. Monte Carlo Simulation of InAlAs/InAlGaAs Tandem Avalanche Photodiodes

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