Low-temperature growth of GaN microcrystals from position-controlled Ga droplets arrayed by a low-energy focused ion beam system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. The Blue Laser Diode;Nakamura,1997
2. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
3. Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy
4. Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors
5. Migration-enhanced epitaxial growth of GaAs on Si using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low temperature selective growth of GaN single crystals on pre-patterned Si substrates;Applied Surface Science;2019-12
2. Growth Mechanisms of Quantum Ring Self-Assembly upon Droplet Epitaxy;The Journal of Physical Chemistry C;2008-04-15
3. MOVPE growth and cathodoluminescence properties of GAN microcrystal co-doped with Zn and Si;Journal of Crystal Growth;2007-03
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