Migration-enhanced epitaxial growth of GaAs on Si using (GaAs)1−x(Si2)x/GaAs strained-layer superlattice buffer layers
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Published:1993-05
Issue:3
Volume:11
Page:820
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
17 articles.
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