Characterization of Berthelot-type behaviors of InGaN/GaN semiconductor heterosystems
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
2. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
3. AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire
4. Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition
5. The red σ2/kT spectral shift in partially disordered semiconductors
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1. Intensive measures of luminescence in GaN/InGaN heterostructures;PLOS ONE;2019-09-24
2. Structural, morphological, optical and electrical characterization of InGaN/GaN MQW structures for optoelectronic applications;Applied Surface Science;2019-05
3. Anomalous optical and magnetic behavior of multi-phase Mn doped Zn2SiO4 nanowires: a new class of dilute magnetic semiconductors;Nanoscale;2014
4. Characterization of Nanocrystallites of InGaN/GaN Multiquantum Wells by High-Resolution X-ray Diffraction;IEEE Transactions on Nanotechnology;2011-07
5. Characterization of temperature-dependent carrier transport in disordered indium-tin-oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/polyfluorene/Ca/Al polymer structures;Thin Solid Films;2011-04
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