Characterisation of GaAsN layers grown by MOVPE-Reference-Cited by-同舟云学术

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Characterisation of GaAsN layers grown by MOVPE

Published:2006-01 Issue:2 Volume:287 Page:625-628
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pelosi Claudio,Attolini Giovanni,Bosi Matteo,Avella Manuel,Calicchio Marco,Musayeva Nahida,Jimenez Juan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

2. Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

4. Electronic Properties of Ga(In)NAs Alloys

5. Band gaps of GaPN and GaAsN alloys

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys;Journal of Electronic Materials;2018-05-30

2. Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy;Journal of Crystal Growth;2015-05

3. Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy;SPIE Proceedings;2013-07-25

4. Growth and structure of sputtered gallium nitride films;Journal of Applied Physics;2007-10

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