Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124138
Reference15 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
4. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
5. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
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1. Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys;Applied Physics Letters;2012-12-17
2. GaInNAs(Sb) Long-Wavelength VCSELs;Springer Series in Optical Sciences;2012-10-16
3. Metal Organic Vapor Phase Growth of Complex Semiconductor Alloys;AIP Conference Proceedings;2010
4. Investigation on the ZnO:N films grown on (0001) and (0001¯) ZnO templates by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2009-03
5. GaAs1−xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy;Journal of Crystal Growth;2008-03
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