Surface modifications induced by bismuth on (001) GaAs surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs
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4. Adsorption of bismuth on Si(001) studied by AES, REELS and mass spectrometry
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1. Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates;Crystal Growth & Design;2021-09-29
2. In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE;Applied Surface Science;2020-12
3. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application;Crystals;2017-02-24
4. Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs;Journal of Alloys and Compounds;2016-11
5. Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE;Journal of Crystal Growth;2014-06
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