Effect of temperature and inhomogeneity on the yield of PtSi–n–Si photodetectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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2. Homogeneous barrier height temperature dependence of Au/n-type GaAs Schottky diode;Indian Journal of Physics;2023-11-15
3. Current–Voltage Characteristics of Pt Metal-based and PtSi Silicide-based n-Si Schottky Diodes over a Wide Measuring Temperature Range;Journal of Electronic Materials;2022-12-08
4. Barrier inhomogeneities in titanium Schottky contacts formed on argon plasma etched p-type Si0.95Ge0.05;Journal of Materials Science: Materials in Electronics;2014-02-01
5. Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode;Physica E: Low-dimensional Systems and Nanostructures;2010-11
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