Phosphorous-beam free InP substrate cleaning for MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE
2. Photoluminescence of undoped (100) InP homoepitaxial films grown by molecular beam epitaxy
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4. Y. Takahira, T. Usami, Y. Matsushima, Technical Digest of Optoelectron. Commun. Conf. (1996) 406.
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1. Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux;Optoelectronics, Instrumentation and Data Processing;2021-09
2. (Invited) Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content;ECS Transactions;2013-03-15
3. Growth of Ge1−xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates;Thin Solid Films;2012-02
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