Growth of concentrated GaInSb alloys with improved chemical homogeneity at low and variable pulling rates-Reference-Cited by-同舟云学术

Growth of concentrated GaInSb alloys with improved chemical homogeneity at low and variable pulling rates

Published:2005-09 Issue:1-2 Volume:283 Page:124-133
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Stelian C.,Duffar T.,Mitric A.,Corregidor V.,Alves L.C.,Barradas N.P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. N. Duhanian, Etude des segregations solutales a l’interieur de l’alliage Ga1−xInxSb en cours de solidification directionnelle en front plan suivant la methode de Bridgman, Ph.D. Thesis, University Paris-VI, 1998 (in French).

2. Experimental study of the solid–liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth

3. Modeling of thermosolutal convection during Bridgman solidification of semiconductor alloys in relation with experiments

4. Numerical analysis of solute distribution and interface stabilization during experimental Bridgman growth of concentrated GaInSb alloys

5. Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

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