Modeling of thermosolutal convection during Bridgman solidification of semiconductor alloys in relation with experiments-Reference-Cited by-同舟云学术

Modeling of thermosolutal convection during Bridgman solidification of semiconductor alloys in relation with experiments

Published:2004-05 Issue:1-3 Volume:266 Page:190-199
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Stelian Carmen,Duffar Thierry

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Models for convection and segregation in the growth of HgCdTe by the vertical bridgman method

2. Modelling of the dynamics of HgCdTe growth by the vertical Bridgman method

3. N. Duhanyan, Etude des segregations solutales a l’interieur de l’alliage Ga1-xInxSb en cours de solidification directionnelle en front plan suivant la methode de Bridgman, Ph.D. Thesis, University Paris-VI, 1998 (in French).

4. Solidification in Bridgman configuration with solutally induced flow

5. Axial Solute Transport during Bridgman Growth of BiSbTe3-Mixed Crystals - a comparison of analytical and numerical results

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