AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers-Reference-Cited by-同舟云学术

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AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers

Published:2005-09 Issue:1-2 Volume:283 Page:68-71
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ko T.K.,Chang S.J.,Su Y.K.,Lee M.L.,Chang C.S.,Lin Y.C.,Shei S.C.,Sheu J.K.,Chen W.S.,Shen C.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

2. High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

3. Solar-Blind AlGaN-Based p-i-n Photodiodes With Low Dark Current and High Detectivity

4. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures

5. High-speed characterization of solar-blind AlxGa1 xN p–i–n photodiodes

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solar-blind UV Schottky barrier photodetectors formed by Au/Ni on β-(Al_xGa_1−x)₂O₃/AlGaN heterostructures;Journal of Materials Chemistry C;2023

2. Thickness-dependent physical and nanomechanical properties of AlxGa1−xN thin films;Materials Science in Semiconductor Processing;2022-11

3. Effects of pulsed Al injection on InGaN/GaN multi-quantum well structures grown by MOCVD;Semiconductor Science and Technology;2021-07-23

4. AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer;Chinese Optics Letters;2013

5. AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes;Japanese Journal of Applied Physics;2010-04-20

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