Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface
2. The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface
3. High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
4. Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions
5. Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures
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