Polarity- and orientation-related defect distribution in 4H-SiC single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
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1. Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals;Journal of Crystal Growth;2022-11
2. Growth of SiC single crystals on patterned seeds by a sublimation method;Journal of Crystal Growth;2016-04
3. Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy;Journal of Electronic Materials;2015-11-25
4. Defect formation in 4H-SiC single crystal grown on the prismatic seeds;Journal of Physics: Conference Series;2014-12-10
5. Effect of TaC-Coated Crucible on SiC Single Crystal Growth;Materials Science Forum;2014-02
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