Determination of composition and energy gaps of GaInNAsSb layers grown by MBE-Reference-Cited by-同舟云学术

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Determination of composition and energy gaps of GaInNAsSb layers grown by MBE

Published:2016-03 Issue: Volume:438 Page:49-54
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Aho A.,Korpijärvi V.-M.,Isoaho R.,Malinen P.,Tukiainen A.,Honkanen M.,Guina M.

Funder

Finnish Funding Agency for Innovation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy;Jackrel;J. Appl. Phys.,2007

2. Performance assessment of multijunction solar cells incorporating GaInNAsSb;Aho;Nanoscale Res. Lett.,2014

3. Monolithic GaInNAsSb/GaAs VECSEL operating at 1550nm;Korpijärvi;Sel. Top. Quantum Electron., IEEE J.,2015

4. Development of GaInNAsSb alloys: growth, band structure, optical properties and applications;Harris;Phys. Status Solidi-B-Basic Solid State Phys.,2007

5. Effect of on band alignment of compressively strained Ga1−xInxNy As1−y−zSbz/GaAs quantum well structures;Aissat;Phys. E: Low. -Dimens. Syst. Nanostruct.,2010

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1. Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications;Energies;2022-09-08

2. Bandgap energy model for GaInNAsSb/GaAs alloys with high N content and strain influence;Journal of Crystal Growth;2022-04

3. Wide spectral coverage (0.7–2.2 eV) lattice‐matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials;Progress in Photovoltaics: Research and Applications;2021-03-09

4. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16

5. Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs;Solar Energy Materials and Solar Cells;2019-06

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