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AlInAsSb for M-LWIR detectors

  • Published:2015-09 Issue: Volume:425 Page:357-359
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Sarney W.L.,Svensson S.P.,Wang D.,Donetsky D.,Kipshidze G.,Shterengas L.,Lin Y.,Belenky G.

Funder

US Army Research Office

US National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Energy-gap variation in mixed III–V alloys;Thompson;Can. J. Phys.,1967

2. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy;Fang;J. Appl. Phys.,1990

3. High-power 2.2-um diode lasers with metamorphic arsenic-free heterostructures;Kipshidze;IEEE Photonics Technol. Lett.,2011

4. Unrelaxed bulk InAsSb with novel absorption, carrier transport and recombination properties for MWIR and LWIR photodetectors;Wang;Proc. SPIE,2012

5. Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers

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