Study on crystal-melt interface shape of sapphire crystal growth by the KY method-Reference-Cited by-同舟云学术

Study on crystal-melt interface shape of sapphire crystal growth by the KY method

Published:2015-12 Issue: Volume:431 Page:15-23
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Weina,Lu Jijun,Chen Hongjian,Yan Wenbo,Min Chunhua,Lian Qingqing,Wang Yunman,Cheng Peng,Liu Caichi,Xu Yongliang

Funder

Hebei Province Science and Technology Support Program

NSFC

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Progress in the growth of large scale Ti: sapphire crystals by the heat exchanger method (HEM) for petawatt class lasers;David;J. Cryst. Growth,2010

2. Substrate-orientation dependence of GaN single-crystal films grown by metal organic vapour-phase epitaxy;Toru;J. Appl. Phys.,1987

3. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates;Kuznia;J. Appl. Phys.,1993

4. Modern trends in crystal growth and new applications of sapphire;Akselrod;J. Cryst. Growth,2012

5. Numerical simulation of heat and fluid flows for sapphire single crystal growth by the Kyropoulos method;Chen;J. Cryst. Growth,2011

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Projected Cost of Gallium Oxide Wafers from Edge-Defined Film-Fed Crystal Growth;Crystal Growth & Design;2022-07-05

2. Numerical simulation of the sapphire growth process using a self-regulating thermal boundary condition method;Applied Thermal Engineering;2018-03

3. Numerical study on the effect of additional resistive heating and crystal rotation on sapphire single crystals (Al2O3) grown by the Kyropoulos method;CrystEngComm;2018

4. Synchrotron X-ray diffraction imaging studies of dislocations in Kyropoulos grown Ti doped sapphire crystal;Journal of Crystal Growth;2017-06