Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO-Reference-Cited by-同舟云学术

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Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

Published:2016-02 Issue: Volume:435 Page:105-109
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pantzas K.,Rogers D.J.,Bove P.,Sandana V.E.,Teherani F.H.,El Gmili Y.,Molinari M.,Patriarche G.,Largeau L.,Mauguin O.,Suresh S.,Voss P.L.,Razeghi M.,Ougazzaden A.

Funder

ANR

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. High internal and external quantum efficiency InGaN/GaN solar cells

2. High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy

3. An AlN Sacrificial Buffer Layer Inserted into the GaN/Patterned Sapphire Substrate for a Chemical Lift-Off Process

4. Thin Film GaN LEDs Using a Patterned Oxide Sacrificial Layer by Chemical Lift-Off Process

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of flexible ZnO nanorod UV photodetectors processed by using a direct silicon etching transfer method;Journal of Materials Chemistry C;2022

2. Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications;Advanced Materials Technologies;2019-06-04

3. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance;ACS Photonics;2018-07-30

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