Growth of BaIn 2 S 4 layers through the hot-wall-epitaxy method and their electric/optical properties-Reference-Cited by-同舟云学术

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Growth of BaIn 2 S 4 layers through the hot-wall-epitaxy method and their electric/optical properties

Published:2016-01 Issue: Volume:433 Page:13-18
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hong K.J.,Jeong T.S.,Youn C.J.

Funder

Chosun University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. II-III2-VI4 compounds: Properties and trends for applications

2. ZnIn2S4 as a window in heterojunction solar cells

3. Low temperature photoconductivity of ZnIn2Se4 and CdIn2Se4

4. Defect Engineering in II–III2–VI4and Related Compounds

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase Equilibria in BaS–In2S3 System;Russian Journal of Inorganic Chemistry;2020-11

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