MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators-Reference-Cited by-同舟云学术

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MBE growth and interfaces characterizations of strained HgTe/CdTe topological insulators

Published:2015-09 Issue: Volume:425 Page:195-198
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thomas C.,Baudry X.,Barnes J.P.,Veillerot M.,Jouneau P.H.,Pouget S.,Crauste O.,Meunier T.,Lévy L.P.,Ballet P.

Funder

ANR

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Quantum Spin Hall Effect in Graphene

2. Spin polarization of the quantum spin Hall edge states

3. Switching Spin and Charge between Edge States in Topological Insulator Constrictions

4. Spin filtering and spin separating effects in U-shaped topological insulator devices

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bilinear Magnetoresistance in HgTe Topological Insulator: Opposite Signs at Opposite Surfaces Demonstrated by Gate Control;Nano Letters;2022-09-22

2. Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8;Journal of Electronic Materials;2020-05-16

3. MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs*;Chinese Physics Letters;2020-03-01

4. Optical studies of wide-bandgap HgCdTe material used in potential-and quantum-well structures;Journal of Physics: Conference Series;2020-03-01

5. The temperature dependence of anomalous magnetoresistance and weak antilocalization in HgTe/CdTe (111) quantum wells;Journal of Applied Physics;2020-02-21

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