Author:
Andryushchenko D A,Bazhenov N L,Mynbaev K D,Mikhailov N N,Remesnik V G
Abstract
Abstract
Optical transmission and photoluminescence were used for the study of wide-bandgap (0.8-1.1 eV) HgCdTe (MCT) material grown by molecular-beam epitaxy. The material, including layers used as spacers and barriers in potential-and quantum-well structures, showed a considerable degree of alloy disorder similar to narrow-gap MCT grown by the same method. In some samples, defect states in the bandgap were found. Optimization of the growth technology for wide-bandgap material should help improving the quality of MCT-based potential-and quantum-well structures designed for various applications.
Subject
General Physics and Astronomy
Cited by
2 articles.
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