Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

Published:2015-09 Issue: Volume:426 Page:129-134
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Adolph David,Tingberg Tobias,Ive Tommy

Funder

Swedish Research Council

Department of Microtechnology and Nanoscience (MC2) at Chalmers University of Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Metalorganic chemical vapor deposition of ZnO (0001) thin films on GaN (0001) templates and ZnO(0001) substrates;Ive;Phys. Status Solidi C,2008

2. Ga-doped ZnO film as a transparent electrode for phthalocyanine/perylene heterojunction solar cell;Yoshida;Jpn. J Appl. Phys.,2008

3. Transparent conductive Al-doped ZnO films for liquid crystal displays;Oh;J. Appl. Phys.,2006

4. A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN;Bayram;Appl. Phys. Lett.,2008

5. A study on the origin of emission of the annealed n-ZnO/p-GaN heterostructure LED;Lee;Thin Solid Films,2009

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