A study of MBE growth-related defects in InAs/GaSb type-II supperlattices for long wavelength infrared detectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Impurities related micro-defects in GaSb crystal grown by LEC method;Journal of Crystal Growth;2024-03
2. Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy;Bulletin of the Lebedev Physics Institute;2023-09
3. Impurities Related Micro-Defects in Gasb Crystal Grown by Lec Method;2023
4. Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation;Infrared Physics & Technology;2022-05
5. A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping;Materials;2021-08-30
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