Atomic transport properties of silicon melt at high temperature-Reference-Cited by-同舟云学术

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Atomic transport properties of silicon melt at high temperature

Published:2022-07 Issue: Volume:590 Page:126701
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Luo Jinping,Zhou Chenyang,Li Qihang,Lin Yishan,Liu Lijun

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

1. Diffusion Coefficients of Impurities in Silicon Melt

2. New Determinations of Diffusion Coefficients for Various Dopants in Liquid Silicon

3. Diffusion coefficients of carbon, oxygen and nitrogen in silicon melt

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1. Role of Longitudinal Temperature Gradients in Eliminating Interleaving Inclusions in Casting of Monocrystalline Silicon Ingots;Crystals;2024-05-17

2. Freezing density scaling of transport coefficients in the Weeks–Chandler–Andersen fluid;The Journal of Chemical Physics;2024-04-01

3. System Size Dependence of the Diffusion Coefficients in MD Simulations: A Simple Correction Formula for Pure Dense Fluids;The Journal of Physical Chemistry B;2024-01-02

4. Elementary vibrational model for transport properties of dense fluids;Physics Reports;2024-01

5. Stokes–Einstein relation without hydrodynamic diameter in the TIP4P/Ice water model;The Journal of Chemical Physics;2023-05-24

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