Correlating yellow and blue luminescence with carbon doping in GaN-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Correlating yellow and blue luminescence with carbon doping in GaN

Published:2022-05 Issue: Volume:586 Page:126634
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schmult S.,Schürmann H.,Schmidt G.,Veit P.,Bertram F.,Christen J.,Großer A.,Mikolajick T.

Funder

Otto-von-Guericke-University Magdeburg

Technische Universität Dresden

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Photoluminescence of ion‐implanted GaN

2. GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

3. Current Status of Carbon‐Related Defect Luminescence in GaN

4. Control of unintentional oxygen incorporation in GaN

5. Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents;Journal of Crystal Growth;2024-01

2. Effect of growth temperature on photoluminescence properties of NH₃-MBE grown GaN-on-Si layers;ST PETER POLY U J-PH;2024

3. Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces;Materials;2023-04-27

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3