Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN-Reference-Cited by-同舟云学术

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Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Published:2016-05-16 Issue:1 Volume:17 Page:239-243
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Schubert Felix¹,Wirth Steffen²,Zimmermann Friederike³,Heitmann Johannes³,Mikolajick Thomas¹⁴,Schmult Stefan⁴⁵

Affiliation:

1. Namlab gGmbH, Dresden, Germany

2. Max-Planck-Institute for Chemical Physics of Solids, Dresden, Germany

3. TU Bergakademie Freiberg, Institute of Applied Physics, Freiberg, Germany

4. TU Dresden, Institute of Semiconductors and Microsystems, Dresden, Germany

5. TU Dresden, Institute for Materials Science, Dresden, Germany

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2016.1178565

Reference18 articles.

1. Progress and prospects of group-III nitride semiconductors

2. The Historical Development of GaAs FET Digital IC Technology

3. Molecular Beam Epitaxy of Ultra-High-Quality AlGaAs/GaAs Heterostructures: Enabling Physics in Low-Dimensional Electronic Systems

4. The role of MBE in recent quantum Hall effect physics discoveries

5. Single-electron transistors in GaN∕AlGaN heterostructures

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1. Role of trapezoidal defects in enhancing the yellow luminescence of high-Al content n-type AlGaN films;Applied Physics Letters;2024-08-05

2. TCAD Modelling of Magnetic Hall Effect Sensors;Inventions;2024-07-10

3. Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents;Journal of Crystal Growth;2024-01

4. Effect of growth temperature on photoluminescence properties of NH₃-MBE grown GaN-on-Si layers;ST PETER POLY U J-PH;2024

5. Oxygen-doped colloidal GaN quantum dots with blue emission;Materials Today Chemistry;2024-01

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