Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3μm band for silicon photonics-Reference-Cited by-同舟云学术

Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3μm band for silicon photonics

Published:2011-01 Issue:1 Volume:315 Page:114-118
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rajesh Mohan,Bordel Damien,Kawaguchi Kenichi,Faure Stephane,Nishioka Masao,Augendre Emmanuel,Clavelier Laurent,Guimard Denis,Arakawa Yasuhiko

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. The Past, Present, and Future of Silicon Photonics

2. Field-effect electroluminescence in silicon nanocrystals

3. A continuous-wave Raman silicon laser

4. Electrically pumped hybrid AlGaInAs-silicon evanescent laser

5. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate

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