MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm-Reference-Cited by-同舟云学术

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MOCVD growth and characterization of multi-stacked InAs/GaAs quantum dots on misoriented Si(100) emitting near 1.3 μm

Published:2016-12 Issue: Volume:455 Page:168-171
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Hao,Wang Qi,Chen Jia,Liu Kai,Ren Xiaomin

Funder

National Natural Science Foundation of China

Program for New Century Excellent Talents in University

International Science & Technology Cooperation Program of China

111 Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. Ultranarrow luminescence lines from single quantum dots;Grundmann;Phys. Rev. Lett.,1995

2. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition;Heinrichsdorff;Appl. Phys. Lett.,1997

3. Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure;Stintz;IEEE Photon. Technol. Lett.,2000

4. Low-threshold oxide-confined 1.3-μm quantum-dot laser;Park;IEEE Photon. Technol. Lett.,2000

5. High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents;Liu;IEEE Photon. Technol. Lett.,2005

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2. Electronic and Optical Characteristics of Core/Shell Quantum Dots;Core/Shell Quantum Dots;2020

3. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers*;Chinese Physics B;2019-07-01

4. Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si(001) substrate by optimizing an AlGaAs nucleation layer;Japanese Journal of Applied Physics;2019-03-05

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