Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer-Reference-Cited by-同舟云学术

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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer

Published:2011-03 Issue:1 Volume:318 Page:464-467
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pan Xu,Wei Meng,Yang Cuibai,Xiao Hongling,Wang Cuimei,Wang Xiaoliang

Funder

Knowledge Innovation Engineering of Chinese Academy of Sciences

National Nature Sciences Foundation of China

State Key Development Program for Basic Research of China

Knowledge Innovation Program of the Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. MOVPE growth of GaN on Si(111) substrates;Dadgar;J. Cryst. Growth,2003

2. Optical absorption and photoluminescence studies of n-type GaN;Zhao;Jpn. J. Appl. Phys.,1999

3. A collector design study for Gaas/Ge/Gaas double heterojunction bipolar-transistors;Strite;J. Vac. Sci. Technol. B,1992

4. Precise determination of lattice-parameter and thermal-expansion coefficient of silicon between 300K and 1500K;Okada;J. Appl. Phys.,1984

5. Enhanced optical emission from GaN films grown on a silicon substrate;Zhang;Appl. Phys. Lett.,1999

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