Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible-Reference-Cited by-同舟云学术

Three-dimensional global analysis of thermal stress and dislocations in a silicon ingot during a unidirectional solidification process with a square crucible

Published:2010-11 Issue:22 Volume:312 Page:3261-3266
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Xuejiang,Nakano Satoshi,Kakimoto Koichi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

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