Composition uniformity of site-controlled InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Composition uniformity of site-controlled InAs/GaAs quantum dots

Published:2011-05 Issue:1 Volume:323 Page:176-179
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Biasiol G.,Baranwal V.,Heun S.,Prasciolu M.,Tormen M.,Locatelli A.,Mentes T.O.,Niño M.A.,Sorba L.

Funder

MIUR-FIRB

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Advanced quantum dot configurations

2. Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration

3. Photoluminescence from seeded three-dimensional InAs∕GaAs quantum-dot crystals

4. G. Biasiol, S. Heun, Phys. Rep., accepted for publication.

5. Studies of oxide desorption from GaAs substrates via Ga[sub 2]O[sub 3] to Ga[sub 2]O conversion by exposure to Ga flux

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1. Correlations between optical properties and Voronoi-cell area of quantum dots;Physical Review B;2019-10-03

2. Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications;Nanotechnology;2017-09-08

3. Electronic and optical properties of InGaAs/GaAs quantum dots with tunable aspect-ratio;Modern Physics Letters B;2014-04-10

4. Applications in Surface Science;Surface Microscopy with Low Energy Electrons;2014

5. Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots;Journal of Applied Physics;2013-11-07

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