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Homoepitaxy on GaN substrate with various treatments by metalorganic vapor phase epitaxy

  • Published:2011-03 Issue:1 Volume:318 Page:454-459
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Chen Kuei-Ming,Wu Yin-Hao,Yeh Yen-Hsien,Chiang Chen-Hao,Chen Kuei-You,Lee Wei-I.

Funder

National Science Council of Taiwan

Ministry of Education of Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Quality AlGaN/GaN HEMT Homo-epitaxy on 4-inch Homebred GaN Substrate by MOCVD;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

2. Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy;RSC Advances;2018

3. High quality (In)GaN films on homoepitaxial substrates;Superlattices and Microstructures;2017-02

4. Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy;physica status solidi (c);2015-03-18

5. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor;Nanotechnology;2015-02-26
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