Growth of the active zone in nitride based long wavelength laser structures-Reference-Cited by-同舟云学术

Growth of the active zone in nitride based long wavelength laser structures

Published:2011-01 Issue:1 Volume:315 Page:250-253
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rossow U.,Jönen H.,Brendel M.,Dräger A.,Langer T.,Hoffmann L.,Bremers H.,Hangleiter A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

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3. Sumitomo: APEX 2 (2009) 092101; Nichia: APEX 2 (2009) 062201; Rohm: Appl. Phys. Lett. 94 (2009) 071105; UCSB: APEX 2 (2009) 082102; Osram Opto: Appl. Phys. Lett. 95 (2009) 071103.

4. Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

5. High quality, high efficiency and ultrahigh In-content InGaN QWs – the problem of thermal stability

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