Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region-Reference-Cited by-同舟云学术

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Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

Published:2013-05 Issue: Volume:370 Page:105-108
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rossow U.,Kruse A.,Jönen H.,Hoffmann L.,Ketzer F.,Langer T.,Buss R.,Bremers H.,Hangleiter A.,Mehrtens T.,Schowalter M.,Rosenauer A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

2. Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

3. True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

4. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

5. Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells;Journal of Crystal Growth;2015-03

2. Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast;Journal of Physics: Conference Series;2013-11-29

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