Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Growth and optical properties of nanometer‐scale GaAs and InAs whiskers
2. A New Understanding of Au-Assisted Growth of III-V Semiconductor Nanowires
3. Growth of InAs Nanowires on SiO2 Substrates: Nucleation, Evolution, and the Role of Au Nanoparticles
4. Analytical description of the metal-assisted growth of III–V nanowires: Axial and radial growths
5. Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition;Applied Physics Express;2018-11-26
2. Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon;Applied Nanoscience;2017-08-23
3. Spatially resolved Raman spectroscopy study of uniform and tapered InAs micro-nano wires: correlation of strain and polytypism;Journal of Raman Spectroscopy;2017-04-12
4. InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy;Journal of Crystal Growth;2016-02
5. Structural and electrical properties of catalyst-free Si-doped InAs nanowires formed on Si(111);Scientific Reports;2015-11-19
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