The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Instabilities, transition and turbulence in the Czochralski crystal melt
2. Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals
3. Silicon crystal growth using a liquid-feeding Czochralski method
4. R.E. Lorenzini, A., Iwata, K..Lorenz, US Patent 4,036,595 (1977).
5. 3-D time-dependent numerical model of flow patterns within a large-scale Czochralski system
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2. Influence of Particle Parameters on the Melting/Migration of Silicon Particles and Turbulent Heat Transfer During Ccz Monocrystalline Silicon Growth;2024
3. Numerical study on the effects of inner crucible window heights on the growth of silicon in a continuous Czochralski process;Journal of Crystal Growth;2023-04
4. Effects of different partition depths on heat and oxygen transport during continuous Czochralski (CCz) silicon crystal growth;Journal of Crystal Growth;2022-04
5. Model experiments for Czochralski crystal growth processes using inductive and resistive heating;IOP Conference Series: Materials Science and Engineering;2022-01-01
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