Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures-Reference-Cited by-同舟云学术

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Complete HVPE experimental investigations: Cartography of SAG GaN towards quasi-substrates or nanostructures

Published:2010-06 Issue:12-13 Volume:312 Page:1899-1907
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chelda-Gourmala O.,Trassoudaine A.,André Y.,Bouchoule S.,Gil E.,Tourret J.,Castelluci D.,Cadoret R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

2. Epitaxial Lateral Overgrowth of GaN

3. Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy

4. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

5. Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD

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1. Dislocation dynamics in α-Ga₂O₃ micropillars from selective-area epitaxy to epitaxial lateral overgrowth;Applied Physics Letters;2022-03-21

2. Doping marker layers for ex situ growth characterisation of HVPE gallium nitride;CrystEngComm;2017

3. Spatially resolved optical control of GaN grown by selective area hydride vapor phase epitaxy;Journal of Crystal Growth;2015-07

4. Hydride Vapor Phase Epitaxy for Current III–V and Nitride Semiconductor Compound Issues;Handbook of Crystal Growth;2015

5. Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy;RSC Advances;2014

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