Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates-Reference-Cited by-同舟云学术

Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

Published:2011-03 Issue:1 Volume:318 Page:500-504
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chiu Ching-Hsueh,Lin Da-Wei,Lin Chien-Chung,Li Zhen-Yu,Chen Yi-Chen,Ling Shih-Chun,Kuo Hao-Chung,Lu Tien-Chang,Wang Shing-Chung,Liao Wei-Tsai,Tanikawa Tomoyuki,Honda Yoshio,Yamaguchi Masahito,Sawaki Nobuhiko

Funder

National Science Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors

2. Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors

3. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

4. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

5. Time- and locally resolved photoluminescence of semipolar GaInN∕GaN facet light emitting diodes

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of (101¯1) Semipolar GaN‐Based Light‐Emitting Diode Structures on Silicon‐on‐Insulator;physica status solidi (b);2023-03-18

2. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates;Journal of Materials Science;2018-08-16

3. Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates;Gallium Nitride Materials and Devices XIII;2018-02-23

4. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017

5. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2017