Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

Author:

Garces N.Y.,Feigelson B.N.,Freitas J.A.,Kim Jihyun,Myers-Ward R.,Glaser E.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

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5. S. Porowski, I. Grzegory, M. Bockowski, B. Lucznik, P. Perlin, High pressure GaN crystals on HVPE GaN seeds as substrates for laser diodes, VI International Workshop on Bulk Nitride Semiconductors, August 23–28, Iznota, Poland.

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