Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors-Reference-Cited by-同舟云学术

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Published:2011-01 Issue:1 Volume:314 Page:92-96
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Huang Y.,Ryou J.-H.,Dupuis R.D.,D'Costa V.R.,Steenbergen E.H.,Fan J.,Zhang Y.-H.,Petschke A.,Mandl M.,Chuang S.-L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

2. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

3. A new semiconductor superlattice

4. Proposal for strained type II superlattice infrared detectors

5. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

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