InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime-Reference-Cited by-同舟云学术

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InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

Published:2011-02 Issue:1 Volume:317 Page:39-42
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hospodková A.,Pangrác J.,Vyskočil J.,Oswald J.,Vetushka A.,Caha O.,Hazdra P.,Kuldová K.,Hulicius E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Low threshold current operation of self-assembled InAs∕GaAs quantum dot lasers by metal organic chemicalvapour deposition

2. Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

3. Reaction kinetics and transport phenomena underlying the low-pressure metalorganic chemical vapor deposition of GaAs

4. Organometallic Vapor-Phase Epitaxy, Theory and Practice;Stringfellow,1989

5. Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate;Nanomaterials;2022-07-21

2. Growth and properties of AIIIBV QD structures for intermediate band solar cells;Journal of Crystal Growth;2015-03

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