Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)-Reference-Cited by-同舟云学术

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Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3(001)

Published:2011-05 Issue:1 Volume:323 Page:247-249
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mortada Hussein,Dentel Didier,Derivaz Mickael,Bischoff Jean-Luc,Denys Emmanuel,Moubah Reda,Ulhaq-Bouillet Corinne,Werckmann Jacques

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO3 high-k dielectrics

2. Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing

3. Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy

4. The Interface between Single Crystalline (001) LaAlO3and (001) Silicon

5. Epitaxial LaAlO3 thin film on silicon: Structure and electronic properties

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensing Applications of Atomically Thin Group IV Carbon Siblings Xenes: Progress, Challenges, and Prospects;Advanced Functional Materials;2020-09-22

2. Stability and band offsets between Si and LaAlO3;The European Physical Journal B;2017-09

3. Silicene, a promising new 2D material;Progress in Surface Science;2015-02

4. Influence of annealing process and its associated atomic migrations on the Si/LaAlO3(001) nanostructure nucleation;Thin Solid Films;2014-07

5. Epitaxial growth of Fe islands on LaAlO3 (001) substrates;Journal of Crystal Growth;2014-04

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