Influence of annealing process and its associated atomic migrations on the Si/LaAlO3(001) nanostructure nucleation-Reference-Cited by-同舟云学术

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Influence of annealing process and its associated atomic migrations on the Si/LaAlO3(001) nanostructure nucleation

Published:2014-07 Issue: Volume:562 Page:668-673
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Azzouz Chiraz Ben,Akremi Abdelwahab,Chefi Chaabanne,Derivaz Mickael,Bischoff Jean-Luc,Florentin Alban,Mortada Hussein,Zanouni Mohamed,Dentel Didier

Funder

Hubert Curien Partnerships

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD;Carazzolle;J. Electron Spectrosc. Relat. Phenom.,2007

2. Thermal stability of LaAlO3/Si deposited by laser molecular beam epitaxy;Lu;Appl. Phys. Lett.,2004

3. High-indium-content InGaAs metal–oxide–semiconductor capacitor with amorphous LaAlO3 gate dielectric;Goel;Appl. Phys. Lett.,2007

4. Epitaxial LaAlO3 thin film on silicon: structure and electronic properties;Mi;Appl. Phys. Lett.,2007

5. LaAlO3/Si capacitors: comparison of different molecular beam deposition conditions and their impact on electrical properties;Pelloquin;J. Appl. Phys.,2013

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