MOVPE growth of high-quality AlN-Reference-Cited by-同舟云学术

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MOVPE growth of high-quality AlN

Published:2006-12 Issue:2 Volume:297 Page:306-310
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dadgar A.,Krost A.,Christen J.,Bastek B.,Bertram F.,Krtschil A.,Hempel T.,Bläsing J.,Haboeck U.,Hoffmann A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Low‐temperature metalorganic chemical vapor deposition of InP on Si(001)

3. Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

4. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base

5. Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

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1. Deposition and structural investigation of uniform AlN(100) films at wafer scale through RF magnetron sputtering;Ceramics International;2024-08

2. Improving the structural performance of low-temperature sputtered AlN on silicon substrate;Semiconductor Science and Technology;2024-02-13

3. Formation of intrinsic point defects in AlN: a study of donor and acceptor characteristics using hybrid QM/MM techniques;Journal of Materials Chemistry A;2024

4. Influence of Si(111) substrate off-cut on AlN film crystallinity grown by magnetron sputter epitaxy;Journal of Applied Physics;2023-07-12

5. Kinetic Monte Carlo simulations for AlN and AlGaN epitaxial growth on AlN;Journal of Crystal Growth;2023-04

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