Spectroscopic investigations of MOVPE-grown InGaAs/GaAs quantum wells with low and high built-in strain
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
2. Optical fiber amplifiers for WDM optical networks
3. High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
4. Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers
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