Low-temperature homoepitaxial growth of α-SiC on on-axis (0001) substrate by vapor–liquid

Low-temperature homoepitaxial growth of α-SiC on on-axis (0001) substrate by vapor–liquid–solid mechanism

Published:2006-08 Issue:2 Volume:293 Page:433-437
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Soueidan M.,Ferro G.,Nsouli B.,Cauwet F.,Mollet L.,Jacquier C.,Younes G.,Monteil Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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